Datasheet > 2SC5299_2015

2SC5299_2015

更新时间： 2022-02-26 13:19:02

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	84K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC5299_2015 数据手册

Product Specification

www.jmnic.com

2SC5299

Silicon NPN Power Transistors

DESCRIPTION

·With TO-3PML package

·High breakdown voltage, high reliability.

·High speed

APPLICATIONS

·Ultrahigh-definition CRT display

·Horizontal deflection output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Maximum absolute ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

800

UNIT

Open base

Open collector

I_CM

Collector current-peak

T_C=25℃

℃

P_C

Collectorl power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

T_stg

JMnic

12 3

中文翻译

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