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2SC5310-5

更新时间： 2024-01-14 03:20:26
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管
页数 文件大小 规格书
4页 47K
描述
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | SOT-346

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中文翻译

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2SC5310-5 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.8
最大集电极电流 (IC)：1 A集电极-发射极最大电压：25 V
配置：SINGLE最小直流电流增益 (hFE)：135
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.25 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

2SC5310-5 数据手册

 浏览型号2SC5310-5的Datasheet PDF文件第2页浏览型号2SC5310-5的Datasheet PDF文件第3页浏览型号2SC5310-5的Datasheet PDF文件第4页 
Ordering number:ENN5613  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1973/2SC5310  
DC/DC Converter Applications  
Features  
Package Dimensions  
unit:mm  
· Adoption of FBET, MBIT processes.  
· Large current capacitance.  
· Low collector-to-emitter saturation voltage.  
· High-speed switching.  
2018B  
[2SA1973/2SC5310]  
0.4  
0.16  
· Ultrasmall package facilitates miniaturization in end  
products.  
3
0 to 0.1  
2
1
0.95  
0.95  
1.9  
2.9  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : CP  
Specifications  
( ) : 2SA1973  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)30  
(–)25  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
(–)6  
V
EBO  
I
(–)1  
A
C
Collector Current (Pulse)  
Base Current  
I
(–)3  
A
CP  
I
(–)200  
250  
mA  
mW  
˚C  
˚C  
B
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
C
Mounted on a glass-epoxy board (20×30×1.6mm)  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
=(–)20V, I =0  
E
=(–)3V, I =0  
C
=(–)2V, I =(–)100mA  
C
(–)0.1  
(–)0.1  
400*  
µA  
µA  
CBO  
CB  
EB  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
EBO  
h
135*  
FE  
* : The 2SA1973/2SC5310 are classified by 100mA h as follows :  
Continued on next page.  
FE  
Rank  
5
6
h
135 to 270  
200 to 400  
FE  
Marking : 2SA1973 : NS  
2SC5310 : NN  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60100TS (KOTO) TA-1556 No.5613–1/4  
1234

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