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2SC5305L(TO-220F) PDF预览

2SC5305L(TO-220F)

更新时间: 2024-10-28 14:39:23
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 159K
描述
Transistor

2SC5305L(TO-220F) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):5 A配置:Single
最小直流电流增益 (hFE):8最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):75 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SC5305L(TO-220F) 数据手册

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UTC 2SC5305  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE HIGH SPEED POWER  
SWITCHING TRANSISTOR  
FEATURES  
* High hFE for Low base drive requirement  
* Suitable for half bridge light ballast Applications  
* Built-in Free-wheeling Diode makes it specially  
suitable for light ballast Applications  
1
* Well controlled storage-time spread for all range of hFE  
TO-220F  
1: Base 2: Collector 3: Emitter  
*Pb-free plating product number: 2SC5305L  
ABSOLUTE MAXIMUM RATINGS  
(TC=25, unless otherwise noted.)  
PARAMETER  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)*  
Base Current (DC)  
Base Current (Pulse)*  
Power Dissipation (TC=25)  
Junction Temperature  
Storage Temperature  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
V
V
A
A
A
A
800  
400  
12  
5
10  
2
4
75  
150  
ICP  
IB  
IBP  
PC  
Tj  
Tstg  
W
-65 ~ 150  
THERMAL CHARACTERISTICS  
(TC=25, unless otherwise noted.)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
Thermal Resistance  
/W  
Junction to Case  
Junction to Ambient  
RθJC  
RθJA  
1.65  
62.5  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
1
www.unisonic.com.tw  
QW-R219-003,A  

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