Datasheet > 2SC5305(TO-220)

2SC5305(TO-220)

更新时间： 2024-11-28 07:17:15

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友顺 - UTC		/
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4页	159K
描述
Transistor

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数据手册

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2SC5305(TO-220) 数据手册

UTC 2SC5305

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER

SWITCHING TRANSISTOR

FEATURES

* High hFE for Low base drive requirement

* Suitable for half bridge light ballast Applications

* Built-in Free-wheeling Diode makes it specially

suitable for light ballast Applications

* Well controlled storage-time spread for all range of hFE

TO-220

1: Base 2: Collector 3: Emitter

*Pb-free plating product number: 2SC5305L

ABSOLUTE MAXIMUM RATINGS

(T_C=25℃, unless otherwise noted.)

PARAMETER

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current (Pulse)*

Base Current (DC)

Base Current (Pulse)*

Power Dissipation (T_C=25℃)

Junction Temperature

Storage Temperature

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

800

400

150

I_CP

I_B

I_BP

P_C

Tstg

℃

-65 ~ 150

THERMAL CHARACTERISTICS

(T_C=25℃, unless otherwise noted.)

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance

℃/W

Junction to Case

Junction to Ambient

RθJC

RθJA

1.65

62.5

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com.tw

QW-R203-028,A

12 3 4

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