UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER
SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
1
* Well controlled storage-time spread for all range of hFE
TO-220F
1: Base 2: Collector 3: Emitter
*Pb-free plating product number: 2SC5305L
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
Base Current (DC)
Base Current (Pulse)*
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
V
V
A
A
A
A
800
400
12
5
10
2
4
75
150
ICP
IB
IBP
PC
Tj
Tstg
W
℃
℃
-65 ~ 150
THERMAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance
℃/W
Junction to Case
Junction to Ambient
RθJC
RθJA
1.65
62.5
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R219-003,A