Datasheet > 2SC5289-T1KB-A

2SC5289-T1KB-A

更新时间： 2024-10-31 05:57:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	162K
描述
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-61, 4 PIN

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2SC5289-T1KB-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5289

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital

cordless phones (DECT, PHS, etc.).

PACKAGE DRAWING

(Unit: mm)

+0.2

–0.3

+0.2

–0.1

2.8

1.5

FEATURES

•

P–1 = 27 dBm TYP.

@f = 1.9 GHz, V^CC= 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8

4-Pin Mini Mold Package

•

EIAJ: SC-61

ORDERING INFORMATION

Part Number

Quantity

Packing Style

5°

2SC5289-T1

3 Kpcs/Reel Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

Remark To order evaluation samples, contact your nearby sales office.

(Unit sample quantity is 50 pcs.)

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

9.0

6.0

2.0

300

Total Power Dissipation

200 (CW)

1.2 (duty = 1/8)

Note

3.0 (duty = 1/24)

150

Junction Temperature

Storage Temperature

˚C

Tstg

–65 to +150

Note Pulse period is 10 msec or less.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10040EJ01V0DS (1st edition)

(Previous No. P10250EJ2V0DS00)

Date Published October 2001 CP(K)

Printed in Japan

The mark

shows major revised points.



NEC Corporation 1995



NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7...12

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