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2SC5295

更新时间: 2024-11-26 22:40:03
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
1页 46K
描述
Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification)

2SC5295 技术参数

生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.065 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:10 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):8500 MHz
Base Number Matches:1

2SC5295 数据手册

  
Transistors  
2SC5295  
Silicon NPN epitaxial planer type  
Unit: mm  
For 2 GHz band low-noise amplification  
+±.1  
+±.1  
±.2  
±.1ꢀ  
–±.±ꢀ  
–±.±ꢀ  
3
I Features  
High transition frequency fT  
Low collector output capacitance Cob  
SS-mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing.  
1
2
(±.ꢀ) (±.ꢀ)  
1.±±±.1  
1.6±±.1  
°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
1: Base  
2: Emitter  
3: Collector  
10  
V
2
65  
V
EIAJ: SC-75  
mA  
mW  
°C  
°C  
SS-Mini Type Package (3-pin)  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Marking Symbol: 3S  
Tj  
125  
Tstg  
55 to +125  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio *  
Transition frequency  
Collector output capacitance  
Forward transfer gain  
Power gain  
Symbol  
ICBO  
IEBO  
hFE  
Conditions  
Min  
Typ  
Max  
1
Unit  
µA  
VCB = 10 V, IE = 0  
VEB = 1 V, IC = 0  
1
µA  
VCE = 8 V, IC = 20 mA  
50  
300  
fT  
VCE = 8 V, IC = 15 mA, f = 1.5 GHz  
VCB = 10 V, IE = 0, f = 1 MHz  
VCE = 8 V, IC = 15 mA, f = 1.5 GHz  
VCE = 8 V, IC = 15 mA, f = 1.5 GHz  
VCE = 8 V, IC = 7 mA, f = 1.5 GHz  
7.0  
8.5  
0.6  
9
GHz  
pF  
Cob  
1.0  
3.0  
2
| S21e  
|
7
dB  
dB  
dB  
GUM  
NF  
10  
2.2  
Noise figure  
Note) *: Rank classification  
Rank  
Q
R
S
hFE  
50 to 120  
100 to 170  
150 to 300  
1

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