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2SC5294

更新时间: 2024-09-14 21:55:31
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 40K
描述
For horizontal deflection output

2SC5294 技术参数

生命周期:Obsolete零件包装代码:TO-3E
包装说明:TOP-3E, FULL PACK-3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

2SC5294 数据手册

 浏览型号2SC5294的Datasheet PDF文件第2页 
Power Transistors  
2SC5294, 2SC5294A  
Silicon NPN triple diffusion mesa type  
For horizontal deflection output  
Unit: mm  
15.5±0.5  
3.0±0.3  
5°  
φ3.2±0.1  
Features  
5°  
High breakdown voltage, and high reliability through the use of a  
glass passivation layer  
High-speed switching  
5°  
5°  
Wide area of safe operation (ASO)  
5°  
4.0  
2.0±0.2  
1.1±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
0.7±0.1  
Parameter  
Symbol  
Ratings  
1500  
1600  
1500  
1600  
600  
Unit  
5.45±0.3  
5.45±0.3  
Collector to  
2SC5294  
2SC5294A  
2SC5294  
2SC5294A  
VCBO  
V
base voltage  
Collector to  
base voltage  
5°  
VCES  
V
1
2
3
1:Base  
2:Collector  
3:Emitter  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
VCEO  
VEBO  
ICP  
V
V
A
A
A
5
TOP–3E Full Pack Package  
30  
IC  
20  
Base current  
IB  
10  
Collector power TC=25°C  
120  
PC  
W
dissipation  
Ta=25°C  
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
Conditions  
min  
typ  
max  
50  
50  
1
Unit  
2SC5294  
2SC5294A  
2SC5294  
2SC5294A  
VCB = 1000V, IE = 0  
µA  
Collector cutoff  
ICBO  
current  
VCB = 1500V, IE = 0  
VCB = 1600V, IE = 0  
VEB = 5V, IC = 0  
VCE = 5V, IC = 10A  
IC = 10A, IB = 2.8A  
IC = 10A, IB = 2.8A  
VCE = 10V  
mA  
1
Emitter cutoff current  
IEBO  
hFE  
50  
12  
3
µA  
Forward current transfer ratio  
5
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
1.5  
Transition frequency  
Storage time  
fT  
tstg  
tf  
3
MHz  
µs  
1.5  
0.12  
2.5  
0.2  
IC = 12A, IB1 = 2.4A, IB2 = –4.8A  
Fall time  
µs  
1

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