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2SC5288 PDF预览

2SC5288

更新时间: 2024-10-29 22:40:03
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管功率放大器
页数 文件大小 规格书
12页 119K
描述
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

2SC5288 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5288  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR L-BAND LOW-POWER AMPLIFIER  
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital  
cordless phones (DECT, PHS, etc.).  
PACKAGE DRAWING  
(Unit: mm)  
+0.2  
–0.3  
+0.2  
–0.1  
2.8  
1.5  
FEATURES  
P–1 = 24 dBm TYP.  
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8  
4-Pin Mini Mold Package  
EIAJ: SC-61  
ORDERING INFORMATION  
Part Number  
Quantity  
Packing Style  
5°  
5°  
5°  
5°  
2SC5288-T1  
3 Kpcs/Reel Embossed tape 8 mm wide.  
Pin 3 (Base), Pin 4 (Emitter) face  
to perforation side of the tape.  
Remark If you require an evaluation sample, please contact an NEC Sales  
Representative. (Unit sample quantity is 50 pcs.)  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
9.0  
6.0  
V
2.0  
V
150  
mA  
mW  
W
Total Power Dissipation  
PT  
200 (CW)  
1.0 (duty = 1/8)  
Note  
Note  
2.5 (duty = 1/24)  
150  
W
Junction Temperature  
Storage Temperature  
Tj  
˚C  
˚C  
Tstg  
–65 to +150  
Note Pulse period is 10 msec or less.  
Document No. P10249EJ2V0DS00 (2nd edition)  
Date Published December 1995 P  
Printed in Japan  
1995  
©

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