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2SC5288-T1KB PDF预览

2SC5288-T1KB

更新时间: 2024-10-30 13:04:23
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管功率放大器
页数 文件大小 规格书
12页 119K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-61, 4 PIN

2SC5288-T1KB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-61
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.77
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:6 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SC5288-T1KB 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5288  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR L-BAND LOW-POWER AMPLIFIER  
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital  
cordless phones (DECT, PHS, etc.).  
PACKAGE DRAWING  
(Unit: mm)  
+0.2  
–0.3  
+0.2  
–0.1  
2.8  
1.5  
FEATURES  
P–1 = 24 dBm TYP.  
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8  
4-Pin Mini Mold Package  
EIAJ: SC-61  
ORDERING INFORMATION  
Part Number  
Quantity  
Packing Style  
5°  
5°  
5°  
5°  
2SC5288-T1  
3 Kpcs/Reel Embossed tape 8 mm wide.  
Pin 3 (Base), Pin 4 (Emitter) face  
to perforation side of the tape.  
Remark If you require an evaluation sample, please contact an NEC Sales  
Representative. (Unit sample quantity is 50 pcs.)  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
9.0  
6.0  
V
2.0  
V
150  
mA  
mW  
W
Total Power Dissipation  
PT  
200 (CW)  
1.0 (duty = 1/8)  
Note  
Note  
2.5 (duty = 1/24)  
150  
W
Junction Temperature  
Storage Temperature  
Tj  
˚C  
˚C  
Tstg  
–65 to +150  
Note Pulse period is 10 msec or less.  
Document No. P10249EJ2V0DS00 (2nd edition)  
Date Published December 1995 P  
Printed in Japan  
1995  
©

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