Datasheet > 2SC5200O(Q)

2SC5200O(Q)

更新时间： 2024-11-13 20:02:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	147K
描述
TRANSISTOR,BJT,NPN,230V V(BR)CEO,15A I(C),TO-247VAR

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技术参数
数据手册

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2SC5200O(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.6	最大集电极电流 (IC)：	15 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	150 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC5200O(Q) 数据手册

2SC5200

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5200

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= 230 V (min)

CEO

Complementary to 2SA1943

Suitable for use in 100-W high fidelity audio amplifier’s output stage

Absolute Maximum Ratings (T = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

230

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

1.5

Collector power dissipation

150

(T = 25°C)

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-21F1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 9.75 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-02-02

12 3 4

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