Datasheet > 2SC5201_06

2SC5201_06

更新时间： 2024-02-14 13:53:49

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
3页	99K
描述
Silicon NPN Triple Diffused Mesa Type High-Voltage Switching Applications

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2SC5201_06 数据手册

2SC5201

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SC5201

High-Voltage Switching Applications

Unit: mm

•

High breakdown voltage: V

= 600 V

CEO

Low saturation voltage: V

= 1.0 V (max)

CE (sat)

(I = 20 mA, I = 0.5 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

600

Collector-emitter voltage

Emitter-base voltage

Collector current

Pulse

100

Base current

°C

Collector power dissipation

Junction temperature

900

150

JEDEC

JEITA

TO-92MOD

Storage temperature range

stg

−55 to 150

°C

―

TOSHIBA

2-5J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 0.36 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3

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