Datasheet > 2SC5200-O(S1,F

2SC5200-O(S1,F

更新时间： 2024-01-07 14:47:57

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	202K
描述
Power Bipolar Transistor

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技术参数
数据手册

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2SC5200-O(S1,F 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.6	Base Number Matches：	1

2SC5200-O(S1,F 数据手册

2SC5200

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5200

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V = 230 V (min)

CEO

Complementary to 2SA1943

Suitable for use in 100-W high fidelity audio amplifier’s output stage

Absolute Maximum Ratings (T = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

230

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

1.5

Collector power dissipation

150

(T = 25°C)

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

TOSHIBA

2-21F1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 9.75 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1994-09

2016-01-07

12 3 4 5

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