2SC5200R(Q)

更新时间： 2024-02-18 04:42:55

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器晶体管功率双极晶体管功率放大器
页数	文件大小	规格书
4页	123K
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2SC5200R(Q) 数据手册

2SC5200

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5200

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= 230 V (min)

CEO

Complementary to 2SA1943

Suitable for use in 100-W high fidelity audio amplifier’s output stage

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

230

CBO

CEO

EBO

Base current

1.5

Collector power dissipation

(Tc = 25°C)

150

Junction temperature

Storage temperature range

150

°C

JEDEC

JEITA

―

stg

−55 to 150

TOSHIBA

2-21F1A

Electrical Characteristics

(Tc = 25°C)

Weight: 9.75 g (typ.)

Characteristics

Symbol

Test Condition

= 230 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

5.0

―

µA

CBO

Emitter cut-off current

= 5 V, I = 0

EBO

Collector-emitter breakdown voltage

= 50 mA, I = 0

230

(BR) CEO

FE (1)

= 5 V, I = 1 A

―

160

DC current gain

(Note)

= 5 V, I = 7 A

―

0.4

1.0

―

3.0

1.5

―

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= 8 A, I = 0.8 A

CE (sat)

= 5 V, I = 7 A

Transition frequency

= 5 V, I = 1 A

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

200

―

Note: h

FE (1)

classification R: 55 to 110, O: 80 to 160

2004-07-07

12 3 4

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