UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
V
V
A
Collector-Base Voltage
230
230
5
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
15
Base Current
IB
PC
TJ
Tstg
1.5
150
150
A
Collector Power Dissipation (Tc=25℃)
W
℃
℃
Junction Temperature
Storage Temperature Range
-55 ~ 150
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
μA
μA
Collector-Emitter Breakdown Voltage V(BR) CEO IC= 50mA, IB=0
230
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat) IC= 8A, IB= 0.8A
0.40
1.0
3.0
1.5
5.0
5.0
160
VBE
ICBO
IEBO
hFE1
hFE2
fT
VCE= 5V, IC= 7A
VCB = 230V, IE=0
VEB= 5V, IC=0
VCE= 5V, IC= 1A
VCE= 5V, IC= 7A
VCE= 5V, IC= 1A
VCB= 10V, IE=0, f=1MHz
55
35
60
30
200
Transition Frequency
Collector Output Capacitance
MHz
pF
Cob
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
CLASSIFICATION OF HFE1
RANK
Range
R
O
55 ~ 110
80 ~ 160
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-005,A