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2SC5200RL PDF预览

2SC5200RL

更新时间: 2024-01-13 07:31:16
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
3页 93K
描述
Transistor

2SC5200RL 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

2SC5200RL 数据手册

 浏览型号2SC5200RL的Datasheet PDF文件第2页浏览型号2SC5200RL的Datasheet PDF文件第3页 
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR  
POWER AMPLIFIER  
APPLICATIONS  
FEATURES  
* Recommended for 100W High Fidelity Audio Frequency  
Amplifier Output Stage.  
* Complementary to UTC 2SA1943  
TO-3PL  
*Pb-free plating product number: 2SC5200L  
ABSOLUTE MAXIMUM RATINGS (TC = 25)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
V
V
A
Collector-Base Voltage  
230  
230  
5
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
15  
Base Current  
IB  
PC  
TJ  
Tstg  
1.5  
150  
150  
A
Collector Power Dissipation (Tc=25)  
W
Junction Temperature  
Storage Temperature Range  
-55 ~ 150  
ELECTRICAL CHARACTERISTICS (Tc=25)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
V
V
μA  
μA  
Collector-Emitter Breakdown Voltage V(BR) CEO IC= 50mA, IB=0  
230  
Collector-Emitter Saturation Voltage  
Base -Emitter Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
VCE (sat) IC= 8A, IB= 0.8A  
0.40  
1.0  
3.0  
1.5  
5.0  
5.0  
160  
VBE  
ICBO  
IEBO  
hFE1  
hFE2  
fT  
VCE= 5V, IC= 7A  
VCB = 230V, IE=0  
VEB= 5V, IC=0  
VCE= 5V, IC= 1A  
VCE= 5V, IC= 7A  
VCE= 5V, IC= 1A  
VCB= 10V, IE=0, f=1MHz  
55  
35  
60  
30  
200  
Transition Frequency  
Collector Output Capacitance  
MHz  
pF  
Cob  
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160  
CLASSIFICATION OF HFE1  
RANK  
Range  
R
O
55 ~ 110  
80 ~ 160  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R214-005,A  

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