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2SC5208 PDF预览

2SC5208

更新时间: 2024-01-31 19:51:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
5页 167K
描述
Silicon NPN Triple Diffused Type High-Voltage Switching Applications

2SC5208 技术参数

生命周期:Lifetime Buy包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.44Is Samacsys:N
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):12
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):1.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC5208 数据手册

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2SC5208  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5208  
High-Voltage Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
DC-AC Inverter Applications  
High-speed switching: t = 1.0 μs (max) ,t = 1.5 μs (max)  
r
f
High breakdown voltage: V  
= 400 V  
CEO  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
600  
400  
7
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
DC  
0.8  
I
C
Collector current  
A
Pulse  
I
1.5  
CP  
JEDEC  
JEITA  
Base current  
I
0.5  
A
B
Collector power dissipation  
Junction temperature  
1.3  
P
W
°C  
°C  
C
TOSHIBA  
2-8M1A  
T
150  
55~150  
j
Weight: 0.55 g (typ.)  
Storage temperature range  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-13  

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