5秒后页面跳转
2SC5206 PDF预览

2SC5206

更新时间: 2024-01-30 19:07:14
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关局域网
页数 文件大小 规格书
5页 29K
描述

2SC5206 技术参数

生命周期:Transferred零件包装代码:TO-220FM
包装说明:TO-220FM, 3 PIN针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.46外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SC5206 数据手册

 浏览型号2SC5206的Datasheet PDF文件第2页浏览型号2SC5206的Datasheet PDF文件第3页浏览型号2SC5206的Datasheet PDF文件第4页浏览型号2SC5206的Datasheet PDF文件第5页 
2SC5206  
Silicon NPN Triple Diffused  
Application  
TO–220FM  
High power switching  
Features  
• High breakdown voltage  
V
= 500 V  
CBO  
• Isolated package  
TO-220FM  
1. Base  
2. Collector  
3. Emitter  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Collector to base voltage  
V
500  
V
CBO  
———————————————————————————————————————————  
Collector to emitter voltage  
V
400  
V
CEO  
———————————————————————————————————————————  
Emitter to base voltage  
V
7
V
EBO  
———————————————————————————————————————————  
Collector current  
I
5
A
C
———————————————————————————————————————————  
Collector peak current  
ic(peak)  
10  
A
———————————————————————————————————————————  
Collector power dissipation  
P
1.8  
W
C
———————————————————————————————————————————  
Collector power dissipation  
P *1  
25  
W
C
———————————————————————————————————————————  
Junction temperature  
T
150  
°C  
j
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
Note: 1. Value at Tc = 25°C  

与2SC5206相关器件

型号 品牌 获取价格 描述 数据表
2SC5207A HITACHI

获取价格

SILICON NPN TRIPLE DIFFUSED PLANAR
2SC5208 TOSHIBA

获取价格

Silicon NPN Triple Diffused Type High-Voltage Switching Applications
2SC5209 KEXIN

获取价格

Small Signal Transistor
2SC5209 TYSEMI

获取价格

High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SC5209 MITSUBISHI

获取价格

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3
2SC5209 ISAHAYA

获取价格

SMALL-SIGNAL TRANSISTOR
2SC5209-13-1H MITSUBISHI

获取价格

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SC5209-13-1J MITSUBISHI

获取价格

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SC5209H ISAHAYA

获取价格

暂无描述
2SC5209J ISAHAYA

获取价格

Transistor