生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.47 | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4703 | NEC |
获取价格 |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
2SC4703 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR | |
2SC4703(NE46234) | NEC |
获取价格 |
Discrete | |
2SC4703-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4703SE | NEC |
获取价格 |
BJT | |
2SC4703-SE | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4703-SE-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4703SF | NEC |
获取价格 |
BJT | |
2SC4703-SF | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, POWER, MINIMOLD PACKAGE-3 | |
2SC4703SF-T1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89 |