Datasheet > 2SC4706

2SC4706

更新时间： 2024-10-26 06:19:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	154K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC4706 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC4706

DESCRIPTION

·With TO-3PN package

·High voltage switching transistor

APPLICATIONS

·For switching regulator and general

purpose applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

900

600

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

130

150

-55~150

℃

T_j

T_stg

12 3 4

中文翻译

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