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2SC4703-A PDF预览

2SC4703-A

更新时间: 2024-10-26 21:10:31
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
7页 47K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-89, 3 PIN

2SC4703-A 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC4703  
NPN EPITAXIAL SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER  
3-PIN POWER MINIMOLD  
DESCRIPTION  
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).  
This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface  
mount type plastic package, power minimold (SOT-89).  
FEATURES  
Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBµV/75  
Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)  
Small package : 3-pin power minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC4703  
25 pcs (Non reel)  
1 kpcs/reel  
• 12 mm wide embossed taping  
• Collector face the perforation side of the tape  
2SC4703-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
25  
12  
V
2.5  
V
150  
mA  
W
P
tot Note  
1.8  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
65 to +150  
Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10339EJ01V1DS (1st edition)  
Date Published May 2003 CP(K)  
The mark shows major revised points.  
Printed in Japan  
NEC Compound Semiconductor Devices 1994, 2003  

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