Datasheet > 2SC4703-A

2SC4703-A

更新时间： 2024-10-26 21:10:31

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	47K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-89, 3 PIN

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2SC4703-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (V^CE= 5 V).

This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

mount type plastic package, power minimold (SOT-89).

FEATURES

•

Low distortion, low voltage: IM²= 55 dBc TYP., IM³= 76 dBc TYP. @ V^CE= 5 V, I^C= 50 mA, V^O= 105 dBµV/75Ω

Large P^tot: P^tot= 1.8 W (Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate)

Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4703

25 pcs (Non reel)

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC4703-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

2.5

150

tot ^Note

1.8

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10339EJ01V1DS (1st edition)

Date Published May 2003 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 1994, 2003

12 3 4 5 6 7

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与2SC4703-A相关器件

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2SC4703SE	NEC	获取价格	BJT
2SC4703-SE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703-SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703SF	NEC	获取价格	BJT
2SC4703-SF	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, POWER, MINIMOLD PACKAGE-3
2SC4703SF-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89
2SC4703SH	NEC	获取价格	BJT
2SC4703-SH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703-SH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703SH-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89