2 S C4 7 0 6
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
External Dimensions MT-100(TO3P)
■Absolute maximum ratings
■Electrical Characteristics
(Ta=25°C)
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Symbol
ICBO
2SC4706
100max
100max
600min
10 to 25
0.5max
1.2max
6typ
2SC4706
Unit
Conditions
VCB=800V
Unit
µA
µA
V
±0.2
4.8
±0.4
15.6
900
V
±0.1
2.0
9.6
IEBO
600
V
VEB=7V
V(BR)CEO
hFE
7
14(Pulse28)
7
V
IC=10mA
a
b
±0.1
ø3.2
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1.5A
VCB=10V, f=1MHz
A
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
130(Tc=25°C)
150
W
°C
°C
2
Tj
MHz
pF
3
Tstg
COB
160typ
+0.2
-0.1
+0.2
-0.1
–55to+150
1.05
0.65
1.4
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
250
35.7
7
10
–5
1.05
–3.5
1max
5max
0.7max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
14
14
12
10
8
2
IC/IB=5 Const.
12
10
8
800mA
1
6
6
4
2
VBE(sat)
200mA
4
IB=100mA
2
VCE(sat)
0
0.02
0
0
0
1
2
3
4
0.05 0.1
0.5
1
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
–
–
–
j-a t Characteristics
hFE IC Temperature Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
(VCE=4V)
8
5
50
125˚C
25˚C
tstg
VCC
250V
IC:IB1:–IB2=10:1.5:5
1
–55˚C
ton
0.5
tf
10
0.1
0.2
5
0.5
1
5
10 14
0.02 0.05 0.1
0.5
1
5
10 14
Collector Current IC(A)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
50
130
100
50
10
10
5
Without Heatsink
Natural Cooling
L=3mH
50
1
1
IB2=–1.0A
Duty:less than 1%
Without Heatsink
Natural Cooling
0.5
0.5
Without Heatsink
3.5
0
0.1
10
0.1
50
50
100
500
1000
100
500
1000
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
117