是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
最大集电极电流 (IC): | 0.15 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.8 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4703-T1 | RENESAS |
获取价格 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR | |
2SC4703-T1-AZ | RENESAS |
获取价格 |
2SC4703-T1-AZ | |
2SC4703-T1SE | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, POWER, MINIMOLD PACKAGE-3 | |
2SC4703-T1SE-A | NEC |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4703-T1SF | RENESAS |
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暂无描述 | |
2SC4703-T1SH | RENESAS |
获取价格 |
暂无描述 | |
2SC4703-T1SH-A | NEC |
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暂无描述 | |
2SC4704 | ETC |
获取价格 |
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2SC4704B | ETC |
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TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 | |
2SC4704C | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 |