DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).
This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface
mount type plastic package, power minimold (SOT-89).
FEATURES
•
•
•
Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω
Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4703
25 pcs (Non reel)
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
2SC4703-T1
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
25
12
V
2.5
V
150
mA
W
P
tot Note
1.8
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10339EJ01V0DS (1st edition)
(Previous No. P10375EJ2V1DS00)
The mark • shows major revised points.
Date Published May 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1994, 2003