Datasheet > 2SC4703-T1SH-A

2SC4703-T1SH-A

更新时间： 2024-10-26 21:10:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	48K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4703-T1SH-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (V^CE= 5 V).

This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

mount type plastic package, power minimold (SOT-89).

FEATURES

•

Low distortion, low voltage: IM²= 55 dBc TYP., IM³= 76 dBc TYP. @ V^CE= 5 V, I^C= 50 mA, Vⁱⁿ= 105 dBµV/75Ω

Large P^tot: P^tot= 1.8 W (Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate)

Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4703

25 pcs (Non reel)

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC4703-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

2.5

150

tot ^Note

1.8

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10339EJ01V0DS (1st edition)

(Previous No. P10375EJ2V1DS00)

The mark • shows major revised points.

Date Published May 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1994, 2003

12 3 4 5 6 7

中文翻译

下载PDF

与2SC4703-T1SH-A相关器件

型号	品牌	获取价格	描述	数据表
2SC4704	ETC	获取价格
2SC4704B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 200MA I(C) \| TO-126
2SC4704C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 200MA I(C) \| TO-126
2SC4705	SANYO	获取价格	Low-Frequency General-Purpose Amp, Applications(High hFE)
2SC4705	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC4705	TYSEMI	获取价格	High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
2SC4706	SANKEN	获取价格	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4706	ISC	获取价格	Silicon NPN Power Transistors
2SC4706	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC4706	JMNIC	获取价格	Silicon NPN Power Transistors