Datasheet > 2SC4703(NE46234)

2SC4703(NE46234)

更新时间： 2024-10-25 23:20:19

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2SC4703(NE46234) 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4703

MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

(Unit: mm)

The 2SC4703 is designed for low distortion, low noise RF amplifier

operating with low supply voltage (V^CE= 5 V). This low distortion

characteristic makes it suitable for CATV, tele-communication and other

use. It employs surface mount type plastic package, Power Mini Mold

(SOT-89).

4.5±0.1

1.6±0.2

1.5±0.1

FEATURES

•

Low distortion at low supply voltage.

IM²55 dB TYP., IM³76 dB TYP.

0.42

0.42±0.06

±0.06

1.5

0.47

±0.06

−0.03

3.0

@V^CE= 5 V, I^C= 50 mA, V^O= 105 dB /75

Large P^Twith surface mount type package.

0.41

+0.05

•

Term, Connection

E : Emitter

C : Collector (Fin)

B : Base

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

(SOT-89)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

2.5

150

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

1.8

T^j

150

T^stg

55 to +150

* 0.7 mm 16 cm²double sided ceramic substrate. (Copper plating)

Document No. P10375EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1994

12 3 4 5 6 7 8

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2SC4703-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703SE	NEC	获取价格	BJT
2SC4703-SE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703-SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4703SF	NEC	获取价格	BJT
2SC4703-SF	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, POWER, MINIMOLD PACKAGE-3
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2SC4703SH	NEC	获取价格	BJT
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