2SC4550M

更新时间： 2024-02-09 19:56:36

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管开关局域网
页数	文件大小	规格书
6页	137K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7A I(C) \| TO-220VAR

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技术参数
数据手册

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2SC4550M 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.21
外壳连接：	ISOLATED	最大集电极电流 (IC)：	7 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	30 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

2SC4550M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4550

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC4550 is a power transistor developed for high-speed

switching and features low V^CE(sat)and high h^FE. This transistor is

ideal for use in drivers such as DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≥ 100 (V^CE= 2 V, I^C= 1.5 A)

V^CE(sat)≤ 0.3 V (I^C= 4 A, I^B= 0.2 A)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Electrode Connection

1. Base

Parameter

Symbol

V^CBO

Ratings

Unit

2. Collector

3. Emitter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

100

V^CEO

V^EBO

7.0

I^C(DC)

7.0

I^C(pulse)*

I^B(DC)

3.5

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15596EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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与2SC4550M相关器件

型号	品牌	描述	获取价格	数据表
2SC4550-M	RENESAS	暂无描述	获取价格
2SC4550-M-AZ	RENESAS	7A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	获取价格
2SC4551	NEC	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING	获取价格
2SC4551	RENESAS	10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	获取价格
2SC4551-AZ	NEC	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,	获取价格
2SC4551K	NEC	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 10A I(C) \| TO-220VAR	获取价格