2SC4552M

更新时间： 2024-11-17 23:20:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	162K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 15A I(C) \| TO-220VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4552M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4552

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC4552 is a power transistor developed for high-speed

switching and features low V^CE(sat)and high h^FE. This transistor is

ideal for use in drivers such as DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≥ 100 (V^CE= 2 V, I^C= 3 A)

V^CE(sat)≤ 0.3 V (I^C= 8 A, I^B= 0.4 A)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Electrode Connection

1. Base

2. Collector

Parameter

Symbol

V^CBO

Ratings

Unit

3. Emitter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

100

V^CEO

V^EBO

7.0

I^C(DC)

I^C(pulse)*

I^B(DC)

7.5

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15598EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

下载PDF

与2SC4552M相关器件

型号	品牌	获取价格	描述	数据表
2SC4552-M	RENESAS	获取价格	15A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4552-M	NEC	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4552-M-AZ	NEC	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4553	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4553-AZ	NEC	获取价格	Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
2SC4554	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING
2SC4555	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC4555	TYSEMI	获取价格	Very small-sized package Low collector-to-emitter saturation voltage.
2SC4555	SANYO	获取价格	Low-Frequency General-Purpose Amp Applications
2SC45555	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 500MA I(C) \| SOT-23VAR