是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.2 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 15 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4552-M-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC4553 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |
2SC4553-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SC4554 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING | |
2SC4555 | KEXIN |
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NPN Epitaxial Planar Silicon Transistor | |
2SC4555 | TYSEMI |
获取价格 |
Very small-sized package Low collector-to-emitter saturation voltage. | |
2SC4555 | SANYO |
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Low-Frequency General-Purpose Amp Applications | |
2SC45555 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | SOT-23VAR | |
2SC45556 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | SOT-23VAR | |
2SC4555-6 | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, ULTRASM |