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2SC4550M PDF预览

2SC4550M

更新时间: 2024-01-26 01:07:36
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关局域网
页数 文件大小 规格书
6页 137K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220VAR

2SC4550M 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.21
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SC4550M 数据手册

 浏览型号2SC4550M的Datasheet PDF文件第1页浏览型号2SC4550M的Datasheet PDF文件第3页浏览型号2SC4550M的Datasheet PDF文件第4页浏览型号2SC4550M的Datasheet PDF文件第5页浏览型号2SC4550M的Datasheet PDF文件第6页 
2SC4550  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Symbol  
VCEO(SUS)  
VCEX(SUS)  
Conditions  
MIN.  
60  
TYP.  
MAX.  
Unit  
Collector to emitter voltage  
Collector to emitter voltage  
IC = 4.0 A, IB = 0.4 A, L = 1 mH  
V
V
IC = 4.0 A, IB1 = IB2 = 0.4 A,  
60  
VBE(OFF) = 1.5 V, L = 180 µH, clamped  
µA  
mA  
µA  
Collector cutoff current  
Collector cutoff current  
Collector cutoff current  
Collector cutoff current  
ICBO  
ICER  
ICEX1  
ICEX2  
VCB = 60 V, IE = 0  
10  
1.0  
10  
VCE = 60 V, RBE = 50 , Ta = 125°C  
VCE = 60 V, VBE(OFF) = 1.5 V  
VCE = 60 V, VBE(OFF) = 1.5 V,  
Ta = 125°C  
1.0  
mA  
µA  
Emitter cutoff current  
DC current gain  
IEBO  
hFE1*  
hFE2*  
hFE3*  
VCE(sat)1*  
VCE(sat)2*  
VBE(sat)1*  
VBE(sat)2*  
Cob  
VEB = 5.0 V, IC = 0  
10  
VCE = 2.0 V, IC = 0.7 A  
VCE = 2.0 V, IC = 1.5 A  
VCE = 2.0 V, IC = 4.0 A  
IC = 4.0 A, IB = 0.2 A  
IC = 6.0 A, IB = 0.3 A  
IC = 4.0 A, IB = 0.2 A  
IC = 6.0 A, IB = 0.3 A  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 10 V, IC = 1.0 A  
100  
100  
60  
DC current gain  
200  
400  
DC current gain  
Collector saturation voltage  
Collector saturation voltage  
Base saturation voltage  
Base saturation voltage  
Collector capacitance  
Gain bandwidth product  
Turn-on time  
0.3  
0.5  
1.2  
1.5  
V
V
V
V
100  
150  
0.1  
1.0  
0.1  
pF  
MHz  
µs  
µs  
µs  
fT  
IC = 4.0 A, RL = 12.5 ,  
IB1 = IB2 = 0.2 A, VCC 50 V  
Refer to the test circuit.  
ton  
0.3  
1.5  
0.3  
Storage time  
tstg  
Fall time  
tf  
* Pulse test PW 350 µs, duty cycle 2%  
hFE CLASSIFICATION  
Marking  
hFE2  
M
L
K
100 to 200  
150 to 300  
200 to 400  
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT  
Base current  
waveform  
Collector current  
waveform  
2
Data Sheet D15596EJ2V0DS  

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