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2SC4551M PDF预览

2SC4551M

更新时间: 2024-11-17 23:20:19
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 142K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR

2SC4551M 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SC4551  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SC4551 is a power transistor developed for high-speed  
switching and features low VCE(sat) and high hFE. This transistor is  
ideal for use in drivers such as DC/DC converters and actuators.  
In addition, a small resin-molded insulation type package  
contributes to high-density mounting and reduction of mounting  
cost.  
FEATURES  
• High hFE and low VCE(sat):  
hFE 100 (VCE = 2 V, IC = 2 A)  
VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A)  
• Mold package that does not require an insulating board or  
insulation bushing  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
ꢀꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢆꢊꢊꢂꢃꢄꢋꢆꢊ  
ꢌꢍꢈꢎꢏꢐꢂ  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
ꢑꢍꢈꢉꢆꢁꢁꢂꢃꢄꢆꢅ  
ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
100  
VCEO  
60  
V
VEBO  
7.0  
V
IC(DC)  
10  
A
IC(pulse)*  
IB(DC)  
20  
5.0  
A
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
30  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15597EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-220VAR