5秒后页面跳转
2SC4551-K PDF预览

2SC4551-K

更新时间: 2024-11-21 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管
页数 文件大小 规格书
6页 142K
描述
暂无描述

2SC4551-K 数据手册

 浏览型号2SC4551-K的Datasheet PDF文件第2页浏览型号2SC4551-K的Datasheet PDF文件第3页浏览型号2SC4551-K的Datasheet PDF文件第4页浏览型号2SC4551-K的Datasheet PDF文件第5页浏览型号2SC4551-K的Datasheet PDF文件第6页 
DATA SHEET  
SILICON POWER TRANSISTOR  
2SC4551  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SC4551 is a power transistor developed for high-speed  
switching and features low VCE(sat) and high hFE. This transistor is  
ideal for use in drivers such as DC/DC converters and actuators.  
In addition, a small resin-molded insulation type package  
contributes to high-density mounting and reduction of mounting  
cost.  
FEATURES  
• High hFE and low VCE(sat):  
hFE 100 (VCE = 2 V, IC = 2 A)  
VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A)  
• Mold package that does not require an insulating board or  
insulation bushing  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
ꢀꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢆꢊꢊꢂꢃꢄꢋꢆꢊ  
ꢌꢍꢈꢎꢏꢐꢂ  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
ꢑꢍꢈꢉꢆꢁꢁꢂꢃꢄꢆꢅ  
ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
100  
VCEO  
60  
V
VEBO  
7.0  
V
IC(DC)  
10  
A
IC(pulse)*  
IB(DC)  
20  
5.0  
A
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
30  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15597EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

与2SC4551-K相关器件

型号 品牌 获取价格 描述 数据表
2SC4551-K-AZ RENESAS

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4551-K-AZ NEC

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4551L NEC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR
2SC4551-L RENESAS

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4551-L-AZ NEC

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4551M NEC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR
2SC4551-M RENESAS

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4551-M NEC

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4551-M-AZ NEC

获取价格

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4552 NEC

获取价格

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING