Datasheet > 2SC4331L-AZ

2SC4331L-AZ

更新时间： 2024-11-02 20:24:11

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	108K
描述
5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN

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技术参数
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2SC4331L-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.31	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	100 V
配置：	SINGLE	最小直流电流增益 (hFE)：	150
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	15 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz	最大关闭时间（toff）：	1900 ns
最大开启时间（吨）：	300 ns	Base Number Matches：	1

2SC4331L-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTORS

2SC4331, 2SC4331-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC4331 and 2SC4331-Z are mold power transistors

developed for high-speed switching and features a very low

collector-to-emitter saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead-processed product and is deal for mounting a

hybrid IC.

• Low collector saturation voltage

V^CE(sat)= 0.3 V MAX. (@I^C= 3 A)

• Fast switching speed:

t^f≤ 0.4 µs MAX. (@I^C= 3 A)

• High DC current gain and excellent linearity

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Base to emitter voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

150

V^CEO

100

V^EBO

7.0

I^C(DC)

5.0

I^C(pulse)*

I^B(DC)

2.5

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.0**, 2.0***

150

Electrode Connection

1. Base

2. Collector

3. Emitter

−55 to +150

T^stg

4. Fin (collector)

PW ≤ 10 ms, duty cycle ≤ 50%

** Printing board mounted

*** 7.5 mm²× 0.7 mm, ceramic board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16136EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SC4331L-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SC4331M	RENESAS	获取价格	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, TO-251, MP-3, 3 PIN
2SC4331M-AZ	RENESAS	获取价格	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SC4331-Z	NEC	获取价格	Silicon Power Transistor
2SC4331-Z	RENESAS	获取价格	SILICON POWER TRANSISTOR
2SC4331-Z-AZ	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4331-ZK	RENESAS	获取价格	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA, TO-252, MP-3Z, 3 PIN
2SC4331-ZK-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-252VAR
2SC4331-ZK-E2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-252VAR
2SC4331-ZL	RENESAS	获取价格	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA, TO-252, MP-3Z, 3 PIN
2SC4331-ZL-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-252VAR

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