2SC4332-L

更新时间： 2024-11-20 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
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2SC4332-L 数据手册

DATA SHEET

SILICON POWER TRANSISTORS

2SC4332, 2SC4332-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SC4332 and 2SC4332-Z are mold power transistors

PACKAGE DRAWING (Unit: mm)

developed for high-speed switching and features a very low

collector-to-emitter saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Low collector saturation voltage

V^CE(sat)= 0.3 V MAX. (I^C= 3 A / I^B= 0.15 A)

• Fast switching speed:

t^f≤ 0.3 µs MAX. (I^C= 3 A)

• High DC current gain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Base to Emitter Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

V^CBO

V^CEO

V^EBO

I^C(DC)

100

7.0

5.0

Note1

I^C(pulse)

2.5

I^B(DC)

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total Power Dissipation

Junction Temperature

Storage Temperature

°C

1.0^Note2, 2.0^Note3

150

T^stg

−55 to +150

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%

2. Printing borard mounted

3. 7.5 mm²x 0.7 mm, ceramic board mounted

Electrode Connection

1. Base

2. Collector

3. Emitter

4. Fin (collector)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16430EJ1V0DS00 (1st edition)

Date Published October 2002 NS CP(K)

Printed in Japan

2002

12 3 4

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与2SC4332-L相关器件

型号	品牌	获取价格	描述	数据表
2SC4332L-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332-L-Z	RENESAS	获取价格	5000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA, MP-3Z, 3 PIN
2SC4332-M	NEC	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA,
2SC4332M-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332M-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332-M-Z	RENESAS	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA,
2SC4332-Z	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4332-Z	KEXIN	获取价格	NPN Silicon Epitaxia
2SC4332-Z	TYSEMI	获取价格	Low collector saturation voltage. Fast switching speed. High DC current gain.
2SC4332-ZK-E2	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-252VAR