Datasheet > 2SC4332M-E1

2SC4332M-E1

更新时间： 2024-11-19 08:34:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	344K
描述
TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR

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2SC4332M-E1 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4332,4332-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWINGS (Unit: mm)

The 2SC4332 and 2SC4332-Z are mold power transistors developed

for high-speed switching and feature a very low collector-to-emitter

saturation voltage.

2.3 0.2

0.5 0.1

6.5 0.2

5.0 0.2

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage power

supply devices, as well as for high-current switching.

FEATURES

1.1 0.2

• Low collector saturation voltage

V^CE(sat)= 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)

• Fast switching speed:

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

t^f≤ 0.3 μs MAX. (IC = 3.0 A)

• High DC current gain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

TO-251 (MP-3)

Collector to Base Voltage

Collector to Emitter Voltage

Base to Emitter Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

VCBO

V^CEO

V^EBO

I^C(DC)

100

6.5 0.2

5.0 0.2

4.4 0.2

<R>

2.3 0.2

0.5 0.1

7.0

Note

5.0

Note1

I^C(pulse)

2.5

I^B(DC)

P^T(TC = 25°C)

P^T(TA = 25°C)

T^j

2 3

Total Power Dissipation

Junction Temperature

Storage Temperature

°C

0.5 0.1

2.3 0.3

1.0^Note2, 2.0^Note3

0.5 0.1

2.3 0.3

0.15 0.15

150

ELECTRODE CONNECTION

T^stg

−55 to +150

1. Base

2. Collector

3. Emitter

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%

2. Printing board mounted

TO-252 (MP-3Z)

3. 7.5 cm²x 0.7 mm, ceramic board mounted

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16430EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5

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与2SC4332M-E1相关器件

型号	品牌	获取价格	描述	数据表
2SC4332M-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332-M-Z	RENESAS	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA,
2SC4332-Z	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4332-Z	KEXIN	获取价格	NPN Silicon Epitaxia
2SC4332-Z	TYSEMI	获取价格	Low collector saturation voltage. Fast switching speed. High DC current gain.
2SC4332-ZK-E2	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-252VAR
2SC4332-ZL	RENESAS	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MP-3Z, 3
2SC4332-ZL-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-252VAR
2SC4332-ZM	NEC	获取价格	暂无描述
2SC4336	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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