Datasheet > 2SC4332-ZK-E2

2SC4332-ZK-E2

更新时间： 2024-11-20 15:25:11

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	344K
描述
TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-252VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC4332-ZK-E2 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC4332-ZK-E2 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4332,4332-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWINGS (Unit: mm)

The 2SC4332 and 2SC4332-Z are mold power transistors developed

for high-speed switching and feature a very low collector-to-emitter

saturation voltage.

2.3 0.2

0.5 0.1

6.5 0.2

5.0 0.2

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage power

supply devices, as well as for high-current switching.

FEATURES

1.1 0.2

• Low collector saturation voltage

V^CE(sat)= 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)

• Fast switching speed:

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

t^f≤ 0.3 μs MAX. (IC = 3.0 A)

• High DC current gain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

TO-251 (MP-3)

Collector to Base Voltage

Collector to Emitter Voltage

Base to Emitter Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

VCBO

V^CEO

V^EBO

I^C(DC)

100

6.5 0.2

5.0 0.2

4.4 0.2

<R>

2.3 0.2

0.5 0.1

7.0

Note

5.0

Note1

I^C(pulse)

2.5

I^B(DC)

P^T(TC = 25°C)

P^T(TA = 25°C)

T^j

2 3

Total Power Dissipation

Junction Temperature

Storage Temperature

°C

0.5 0.1

2.3 0.3

1.0^Note2, 2.0^Note3

0.5 0.1

2.3 0.3

0.15 0.15

150

ELECTRODE CONNECTION

T^stg

−55 to +150

1. Base

2. Collector

3. Emitter

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%

2. Printing board mounted

TO-252 (MP-3Z)

3. 7.5 cm²x 0.7 mm, ceramic board mounted

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16430EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5

中文翻译

下载PDF

与2SC4332-ZK-E2相关器件

型号	品牌	获取价格	描述	数据表
2SC4332-ZL	RENESAS	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MP-3Z, 3
2SC4332-ZL-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-252VAR
2SC4332-ZM	NEC	获取价格	暂无描述
2SC4336	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4336	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC4336	JMNIC	获取价格	Silicon NPN Power Transistors
2SC4336	ISC	获取价格	Silicon NPN Power Transistors
2SC4336_15	JMNIC	获取价格	Silicon NPN Power Transistors
2SC4336_2015	JMNIC	获取价格	Silicon NPN Power Transistors
2SC4336K	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas

与2SC4332-ZK-E2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4332-ZK-E2

2SC4332-ZK-E2 技术参数

2SC4332-ZK-E2 数据手册

与2SC4332-ZK-E2相关器件

与2SC4332-ZK-E2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4332-ZK-E2

2SC4332-ZK-E2 技术参数

2SC4332-ZK-E2 数据手册

与2SC4332-ZK-E2相关器件

与2SC4332-ZK-E2相关文章

您还可以找

您在本页遇到什么问题？