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2SC4342L PDF预览

2SC4342L

更新时间: 2024-11-01 23:20:19
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页数 文件大小 规格书
6页 119K
描述
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C) | TO-126

2SC4342L 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SC4342  
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR HIGH-SPEED SWITCHING  
ORDERING INFORMATION  
The 2SC4342 is a high-speed Darlington power transistor.  
This transistor is ideal for high-precision control such as PWM  
control for pulse motors or blushless motor of OA and FA equipment.  
Part No.  
Package  
TO-126  
2SC4342  
FEATURES  
• On-chip C-to-E reverse diode  
• Fast switching speed  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
VCBO  
Conditions  
Ratings  
150  
100  
8.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
VCEO  
V
VEBO  
V
3.0  
IC(DC)  
A
PW 10 ms,  
5.0  
IC(pulse)  
A
duty cycle 50%  
Base current (DC)  
IB(DC)  
PT  
0.3  
1.3  
A
TA = 25°C  
TC = 25°C  
Total power dissipation  
W
W
°C  
°C  
12  
Junction temperature  
Storage temperature  
Tj  
150  
55 to +150  
Tstg  
INTERNAL EQUIVALENT CIRCUIT  
1. Base  
2. Collector  
3. Emitter  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14862EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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