2SC4346-Z

更新时间： 2024-11-01 22:39:59

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管高压
页数	文件大小	规格书
5页	113K
描述
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

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中文翻译

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2SC4346-Z 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4346,4346-Z

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

ORDERING INFORMATION

DESCRIPTION

The 2SC4346 is a mold power transistor developed for

high-speed switching, high voltage switching, and is ideal

for use as a driver in devices such as switching regulators,

DC/DC converters, and high-frequency power amplifiers.

PART NUMBER

2SC4346

PACKAGE

TO-251 (MP-3)

TO-252 (MP-3Z)

2SC4346-Z

FEATURES

• Small package, but can control for high-current

• Low collector saturation voltage

V^CE(sat)= 1.0 V MAX. (IC = 2.0 A)

• Ultra high-speed switching

t^f= 0.3 µs MAX. (IC = 2.0 A)

• Base reverse bias safe operating area is wide

V^CEX(SUS)1= 450 V MIN. (IC = 2.0 A)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse)

Base current (DC)

VCBO

VCEO

V^EBO

I^C(DC)

500

400

8.0

5.0

Note1

I^C(pulse)

I^B(DC)

P^T1(TC = 25°C)

P^T2(TA = 25°C)

2.5

Total Power Dissipation

Junction Temperature

Storage Temperature

°C

1.0 ^Note2, 2.0 ^Note3

150

Tstg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. Mounted on print board

3. Mounted on ceramic substrate of 7.5 mm²x 0.7 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17082EJ2V0DS00 (2nd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2004

12 3 4 5

中文翻译

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