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2SC4351 PDF预览

2SC4351

更新时间: 2024-11-01 22:39:59
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 112K
描述
DARLINGTON POWER TRANSISTOR

2SC4351 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.36
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:70 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SC4351 数据手册

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DATA SHEET  
DARLINGTON POWER TRANSISTOR  
2SC4351  
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR HIGH-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SC4351 is a high-speed Darlington power transistor. This  
transistor is ideal for high-precision control such as PWM control for  
pulse motors or blushless motor of OA and FA equipment.  
FEATURES  
• Mold package that does not require an insulating board or  
insulation bushing  
• On-chip C to B constant voltage diode for surge voltage  
absorption  
• On-chip C to E reverse diode  
• Fast switching speed  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
60 10  
60 10  
8.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCEO  
V
VEBO  
V
5.0  
IC(DC)  
A
Electrode Connection  
1. Base  
10  
IC(pulse)*  
IB(DC)  
A
0.5  
A
2. Collector  
3. Emitter  
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
20  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15594EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

与2SC4351相关器件

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2SC4351-AZ NEC

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Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC4351K NEC

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TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186VAR
2SC4351-K RENESAS

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5A, 70V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4351-K-AZ NEC

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Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC4351K-S5-AZ RENESAS

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2SC4351K-S5-AZ
2SC4351L NEC

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TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186VAR
2SC4351-L-AZ RENESAS

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5A, 70V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC4351L-S5-AZ RENESAS

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2SC4351L-S5-AZ
2SC4351M NEC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186VAR
2SC4351-M RENESAS

获取价格

5A, 70V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3