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2SC4351L PDF预览

2SC4351L

更新时间: 2024-11-01 23:20:19
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 112K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186VAR

2SC4351L 数据手册

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DATA SHEET  
DARLINGTON POWER TRANSISTOR  
2SC4351  
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR HIGH-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SC4351 is a high-speed Darlington power transistor. This  
transistor is ideal for high-precision control such as PWM control for  
pulse motors or blushless motor of OA and FA equipment.  
FEATURES  
• Mold package that does not require an insulating board or  
insulation bushing  
• On-chip C to B constant voltage diode for surge voltage  
absorption  
• On-chip C to E reverse diode  
• Fast switching speed  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
60 10  
60 10  
8.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCEO  
V
VEBO  
V
5.0  
IC(DC)  
A
Electrode Connection  
1. Base  
10  
IC(pulse)*  
IB(DC)  
A
0.5  
A
2. Collector  
3. Emitter  
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
20  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15594EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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