2SC4351M

更新时间： 2024-11-17 23:20:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	112K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 5A I(C) \| SOT-186VAR

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中文翻译

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数据手册

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2SC4351M 数据手册

DATA SHEET

DARLINGTON POWER TRANSISTOR

2SC4351

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC4351 is a high-speed Darlington power transistor. This

transistor is ideal for high-precision control such as PWM control for

pulse motors or blushless motor of OA and FA equipment.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• On-chip C to B constant voltage diode for surge voltage

absorption

• On-chip C to E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

60 10

8.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

V^EBO

5.0

I^C(DC)

Electrode Connection

1. Base

I^C(pulse)*

I^B(DC)

0.5

2. Collector

3. Emitter

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15594EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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