Datasheet > 2SC4342-M-AZ

2SC4342-M-AZ

更新时间： 2024-11-19 09:51:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	117K
描述
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

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2SC4342-M-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4342

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

ORDERING INFORMATION

The 2SC4342 is a high-speed Darlington power transistor.

This transistor is ideal for high-precision control such as PWM

control for pulse motors or blushless motor of OA and FA equipment.

Part No.

Package

TO-126

2SC4342

FEATURES

• On-chip C-to-E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

150

100

8.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

V^EBO

3.0

I^C(DC)

PW ≤ 10 ms,

5.0

I^C(pulse)

duty cycle ≤ 50%

Base current (DC)

I^B(DC)

P^T

0.3

1.3

T^A= 25°C

T^C= 25°C

Total power dissipation

°C

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14862EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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