Datasheet > 2SC4331-ZM

2SC4331-ZM

更新时间： 2024-01-22 16:56:37

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
6页	110K
描述
TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-252VAR

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2SC4331-ZM 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.45	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	100 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz	最大关闭时间（toff）：	1900 ns
最大开启时间（吨）：	300 ns	Base Number Matches：	1

2SC4331-ZM 数据手册

DATA SHEET

SILICON POWER TRANSISTORS

2SC4331, 2SC4331-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC4331 and 2SC4331-Z are mold power transistors

developed for high-speed switching and features a very low

collector-to-emitter saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead-processed product and is deal for mounting a

hybrid IC.

• Low collector saturation voltage

V^CE(sat)= 0.3 V MAX. (@I^C= 3 A)

• Fast switching speed:

t^f≤ 0.4 µs MAX. (@I^C= 3 A)

• High DC current gain and excellent linearity

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Base to emitter voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

150

V^CEO

100

V^EBO

7.0

I^C(DC)

5.0

I^C(pulse)*

I^B(DC)

2.5

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.0**, 2.0***

150

Electrode Connection

1. Base

2. Collector

3. Emitter

−55 to +150

T^stg

4. Fin (collector)

PW ≤ 10 ms, duty cycle ≤ 50%

** Printing board mounted

*** 7.5 mm²× 0.7 mm, ceramic board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16136EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SC4331-ZM相关器件

型号	品牌	获取价格	描述	数据表
2SC4331-ZM-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-252VAR
2SC4332	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SC4332-K	RENESAS	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA,
2SC4332K-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332-K-Z	NEC	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA,
2SC4332-L	NEC	获取价格	暂无描述
2SC4332L-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
2SC4332-L-Z	RENESAS	获取价格	5000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA, MP-3Z, 3 PIN
2SC4332-M	NEC	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA,
2SC4332M-E1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR

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