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2SC3868 PDF预览

2SC3868

更新时间: 2024-09-15 21:55:35
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 61K
描述
Silicon NPN triple diffusion planar type

2SC3868 技术参数

生命周期:Obsolete零件包装代码:TO-220F
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.77Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):25 MHzBase Number Matches:1

2SC3868 数据手册

 浏览型号2SC3868的Datasheet PDF文件第2页浏览型号2SC3868的Datasheet PDF文件第3页 
Power Transistors  
2SC3868  
Silicon NPN triple diffusion planar type  
For high breakdown voltage high-speed switching  
Unit: mm  
10.0±0.2  
5.5±0.2  
4.2±0.2  
2.7±0.2  
Features  
High-speed switching  
φ3.1±0.1  
High collector to base voltage VCBO  
Wide area of safe operation (ASO)  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
+0.2  
–0.1  
Absolute Maximum Ratings (T =25˚C)  
0.5  
C
0.8±0.1  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
2.54±0.25  
Collector to base voltage  
500  
500  
V
5.08±0.5  
Collector to emitter voltage  
1
2
3
400  
V
1:Base  
2:Collector  
3:Emitter  
Emitter to base voltage  
Peak collector current  
Collector current  
7
V
3
A
TO–220 Full Pack Package(a)  
IC  
1.5  
A
Base current  
IB  
0.5  
A
Collector power TC=25°C  
25  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
100  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = 500V, IE = 0  
IEBO  
VCEO  
hFE1  
hFE2  
VEB = 5V, IC = 0  
Collector to emitter voltage  
IC = 10mA, IB = 0  
400  
15  
8
VCE = 5V, IC = 0.1A  
VCE = 5V, IC = 0.8A  
IC = 0.8A, IB = 0.16A  
IC = 0.8A, IB = 0.16A  
VCE = 10V, IC = 0.2A, f = 10MHz  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
1
V
V
1.5  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
25  
MHz  
µs  
0.7  
2
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,  
VCC = 150V  
µs  
0.3  
µs  
1

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