Datasheet > 2SC388

2SC388

更新时间： 2024-11-29 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	101K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC388 数据手册

RoHS

2SC388

2SC388 TRANSISTOR (NPN)

TO-92

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM:

0.3

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

1 2 3

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=10µA, I_E=0

Ic=5mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA, I_C=0

µA

V_CB=30V, I_E=0

0.1

200

0.2

1.2

I_EBO

Emitter cut-off current

V_EB=3V, I_C=0

h_FE(1)

DC current gain

_CE=12.5V, I_C=12.5mA

I_C=15mA, I_B=1.5mA

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

300

0.8

MHz

V_CE=12.5V, I_C=12.5mA

_CB=10V, I_E=0, f=1MHz

C_ob

Collector output capacitance

_CC=12.5V, I_c=12.5mA,

Gpe

Power Gain

f=45MHZ

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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