Datasheet > 2SC3709A_04

2SC3709A_04

更新时间： 2022-09-17 15:29:42

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	143K
描述
High-Current Switching Applications

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2SC3709A_04 数据手册

2SC3709A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3709A

High-Current Switching Applications

Unit: mm

•

Low collector saturation voltage: V = 0.4 V (max)

CE (sat)

High-speed switching: t

= 1.0 µs (typ.)

stg

Complementary to 2SA1451A

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

Collector power dissipation

(Tc = 25°C)

JEDEC

―

Junction temperature

Storage temperature range

150

°C

JEITA

stg

−55 to 150

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Electrical Characteristics

(Tc = 25°C)

Characteristics

Symbol

Test Condition

= 60 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

µA

CBO

Emitter cut-off current

= 6 V, I = 0

EBO

Collector-emitter breakdown voltage

I = 50 mA, I = 0

C B

(BR) CEO

FE (1)

= 1 V, I = 1 A

―

240

DC current gain

(Note)

= 1 V, I = 6 A

―

0.25

0.9

―

0.4

1.2

―

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 6 A, I = 0.3 A

CE (sat)

BE (sat)

= 6 A, I = 0.3 A

= 5 V, I = 1 A

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

180

―

Turn-on time

―

0.2

1.0

0.2

―

Output

20 µs

Input

Switching time

µs

Storage time

Fall time

stg

≈ 30 V

= −I = 0.3 A, duty cycle ≤ 1%

Note: h

FE (1)

classification O: 70 to 140, Y: 120 to 240

2004-07-07

12 3 4 5

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