Datasheet > 2SC3709A_04

2SC3709A_04

更新时间： 2024-11-18 07:30:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	143K
描述
High-Current Switching Applications

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中文翻译

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数据手册

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2SC3709A_04 数据手册

2SC3709A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3709A

High-Current Switching Applications

Unit: mm

•

Low collector saturation voltage: V = 0.4 V (max)

CE (sat)

High-speed switching: t

= 1.0 µs (typ.)

stg

Complementary to 2SA1451A

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

Collector power dissipation

(Tc = 25°C)

JEDEC

―

Junction temperature

Storage temperature range

150

°C

JEITA

stg

−55 to 150

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Electrical Characteristics

(Tc = 25°C)

Characteristics

Symbol

Test Condition

= 60 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

µA

CBO

Emitter cut-off current

= 6 V, I = 0

EBO

Collector-emitter breakdown voltage

I = 50 mA, I = 0

C B

(BR) CEO

FE (1)

= 1 V, I = 1 A

―

240

DC current gain

(Note)

= 1 V, I = 6 A

―

0.25

0.9

―

0.4

1.2

―

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 6 A, I = 0.3 A

CE (sat)

BE (sat)

= 6 A, I = 0.3 A

= 5 V, I = 1 A

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

180

―

Turn-on time

―

0.2

1.0

0.2

―

Output

20 µs

Input

Switching time

µs

Storage time

Fall time

stg

≈ 30 V

= −I = 0.3 A, duty cycle ≤ 1%

Note: h

FE (1)

classification O: 70 to 140, Y: 120 to 240

2004-07-07

12 3 4 5

中文翻译

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与2SC3709A_04相关器件

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2SC3709AO	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 12A I(C) \| TO-220AB
2SC3709A-O	TOSHIBA	获取价格	TRANSISTOR 12 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General P
2SC3709AY	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 12A I(C) \| TO-220AB
2SC3709A-Y	TOSHIBA	获取价格	High-Current Switching Applications
2SC3709O	ISC	获取价格	暂无描述
2SC3709Y	TOSHIBA	获取价格	TRANSISTOR 12 A, 50 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
2SC3709Y	ISC	获取价格	Transistor
2SC3710	JMNIC	获取价格	Silicon NPN Transistors
2SC3710	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)
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