2SC3710A-YF

更新时间： 2024-11-18 12:54:27

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	170K
描述
High-Power Switching Applications

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数据手册

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2SC3710A-YF 数据手册

2SC3710A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3710A

High-Power Switching Applications

Unit: mm

•

Low collector saturation voltage: V

= 0.4 V (max)

CE (sat)

High-speed switching: t

= 1.0 μs (typ.)

stg

Complementary to 2SA1452A

Absolute Maximum Ratings (T = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

(Tc = 25°C)

JEDEC

―

Junction temperature

Storage temperature range

150

°C

JEITA

stg

−55 to 150

TOSHIBA

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.7 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-12-21

12 3 4 5

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