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2SC3710_2014

更新时间: 2024-11-19 01:19:43
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锦美电子 - JMNIC /
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描述
Power Transistors

2SC3710_2014 数据手册

  
Power Transistors  
www.jmnic.com  
2SC3710  
Silicon NPN Transistors  
Features  
B C E  
With TO-220Fa package  
Complement to type 2SA1452  
Hihg current switching applications  
Absolute Maximum Ratings Tc=25  
SYMBOL  
VCBO  
VCEO  
VEBO  
IB  
PARAMETER  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Base current  
RATING  
UNIT  
V
80  
80  
V
6
2
V
A
IC  
Collector current  
12  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
30  
W
Tj  
150  
-55~150  
Tstg  
TO-220Fa  
Electrical Characteristics Tc=25  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
Typ.  
MAX  
UNIT  
ICBO  
Collector cut-off current  
VCB=80V; IE=0  
10  
uA  
IEBO  
VCBO  
Emitter cut-off current  
VEB=6V; IC=0  
IC=50mA; IB=0  
IC=6A; IB=0.3A  
10  
uA  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltages  
Collector-emitter saturation voltages  
Forward current transfer ratio  
Forward current transfer ratio  
Base-emitter saturation voltages  
Base-emitter saturation voltages  
Transition frepuency  
VCEO  
80  
VEBO  
VCE(sat-1)  
VCE(sat-2)  
hFE-1  
0.4  
240  
1.2  
V
IC=1A; VCE=1V  
IC=6A; VCE=1V  
IC=6A; IB=0.3A  
70  
40  
hFE-2  
V
VBE sat-1)  
(
VBE(sat-2)  
fT  
IC=1A; VCE=5V  
80  
MHz  
pF  
Cob  
Collector Out put Capacitance  
VCB=10V;f=1MHz  
220  
hFE-1 Classifications  
O
Y
70-140  
120-240  
JMnic  

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