Datasheet > 2SC3585R45

2SC3585R45

更新时间： 2024-11-25 23:20:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	105K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 35MA I(C) \| SOT-346

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中文翻译

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2SC3585R45 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3585

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3585 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. The

2SC3585 features excellent power gain with very low-noise figures. The

2SC3585 employs direct nitride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values. This allows

excellent associated gain and very wide dynamic range.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

1.8 dB TYP.

9 dB TYP.

@f = 2.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

250

I^EBO

V^EB= 1 V, I^C= 0

h^FE*

f^T

100

V^CE= 6 V, I^C= 10 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

GHz

C^re**

0.3

8.0

0.8

V^CB= 10 V, I^E= 0, f = 1.0 MHz

S^21e

6.0

V^CE= 6 V, I^C= 10 mA, f = 2.0 GHz

V^CE= 6 V, I^C= 5 mA, f = 2.0 GHz

MAG

1.8

3.0

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R43/Q *

R43

R44/R *

R44

R45/S *

R45

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10361EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4 5 6 7 8

中文翻译

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与2SC3585R45相关器件

型号	品牌	获取价格	描述	数据表
2SC3585-R45-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585-R-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585S	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 35MA I(C) \| SOT-346
2SC3585-S	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585-S	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3585-S-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585-T1B	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
2SC3587	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
2SC3588	NEC	获取价格	NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
2SC3588K	ETC	获取价格	BJT

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