Datasheet > 2SC3588-ZL-E1

2SC3588-ZL-E1

更新时间： 2024-11-23 15:28:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	738K
描述
TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),TO-252VAR

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技术参数
数据手册

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2SC3588-ZL-E1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC3588-ZL-E1 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC3588-Z

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

<R>

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The 2SC3588-Z is designed for High Voltage Switching, especially in

Hybrid Integrated Circuits.

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

2.3 ±0.2

0.5 ±0.1

Note

FEATURES

• High Voltage VCEO = 400 V

• Complement to 2SA1400-Z

2 3

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

0.5 ±0.1

2.3 ±0.3

0.5 ±0.1

2.3 ±0.3

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

VCBO

V^CEO

V^EBO

I^C(DC)

IC(pulse)

500

0.15 ±0.15

400

1. Base

2. Collector

3. Emitter

0.5

Collector Current (DC)

Collector Current (pulse) ^{Note 1}

Total Power Dissipation (T^A= 25°C) ^{Note 2}

Junction Temperature

1.0

4. Collector Fin

2.0

°C

Note The depth of notch at the top of the fin is

T^j

150

from 0 to 0.2 mm.

Storage Temperature

T^stg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm²× 0.7 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17289EJ4V0DS00 (4th edition)

(Previous No. TC-1663A)

Date Published July 2006 NS CP(K)

Printed in Japan

1985, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4

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与2SC3588-ZL-E1相关器件

型号	品牌	获取价格	描述	数据表
2SC3588-ZL-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),TO-252VAR
2SC3588-ZM	NEC	获取价格	BJT
2SC3588-Z-M	NEC	获取价格	500mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3588-Z-M-AZ	NEC	获取价格	500mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3588-ZM-E2	RENESAS	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),TO-252VAR
2SC3588-ZM-E2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,500MA I(C),TO-252VAR
2SC3588-Z-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
2SC3588-Z-T1K	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
2SC3588-Z-T1M	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
2SC3588-Z-T2K	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI