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2SC3585

更新时间: 2024-11-23 06:22:35
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 38K
描述
NPN Silicon Epitaxial Transistor

2SC3585 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxial Transistor  
2SC3585  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
NF 1.8 dB TYP. @f = 2.0 GHz  
Ga 9 dB TYP. @f = 2.0 GHz  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
20  
10  
V
1.5  
V
35  
mA  
mW  
Total power dissipation  
Junction temperature  
PT  
200  
Tj  
150  
Storage temperature  
Tstg  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
Testconditons  
Min  
50  
Typ  
Max  
1.0  
Unit  
ìA  
VCB = 10 V, IE = 0  
VEB = 1V, IC = 0  
IEBO  
1.0  
ìA  
hFE*1 VCE = 6 V, IC =10 mA  
fT VCE = 6 V, IC = 10 mA  
100  
10  
250  
Gain Bandwidth Product  
Feed-Back Capacitance  
Insertion Power Gain  
Maximum Available Gain  
Noise Figure  
GHz  
pF  
Cre *2 VCB = 10 V, IE = 0, f = 1.0 MHz  
0.3  
8.0  
10  
0.8  
3.0  
|S21e|2  
VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
6.0  
dB  
MAG VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
dB  
NF  
VCE = 6 V, IC = 5 mA, f = 2.0 GHz  
1.8  
dB  
*1. Pulse Measurement PW 350ìs, Duty Cycle 2 %  
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.  
hFE Classification  
Marking  
Rank  
hFE  
R43  
R44  
R45  
R43/Q  
50 100  
R44/R  
R45/S  
80 160  
125 250  
1
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