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2SC3585-R43 PDF预览

2SC3585-R43

更新时间： 2024-11-30 14:39:23
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
8页 92K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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2SC3585-R43 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.25其他特性：LOW NOISE
最大集电极电流 (IC)：0.035 A基于收集器的最大容量：0.8 pF
集电极-发射极最大电压：10 V配置：SINGLE
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：10000 MHzBase Number Matches：1

2SC3585-R43 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC3585  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISOR  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in  
low-noise and small signal amplifiers from VHF band to UHF band. The  
2SC3585 features excellent power gain with very low-noise figures. The  
2SC3585 employs direct nitride passivated base surface process (DNP  
process) which is an NEC proprietary new fabrication technique which  
provides excellent noise figures at high current values. This allows  
excellent associated gain and very wide dynamic range.  
(Units: mm)  
2.8±0.2  
1.5  
+0.1  
−0.15  
0.65  
2
1
FEATURES  
3
•
•
NF  
Ga  
1.8 dB TYP.  
9 dB TYP.  
@f = 2.0 GHz  
@f = 2.0 GHz  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Marking  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
10  
V
V
1.5  
V
35  
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
PIN CONNECTIONS  
1. Emitter  
2. Base  
Tj  
150  
Tstg  
65 to +150  
C
3. Collector  
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
A
TEST CONDITIONS  
VCB = 10 V, IE = 0  
ICBO  
1.0  
1.0  
250  
IEBO  
A
VEB = 1 V, IC = 0  
hFE *  
fT  
50  
100  
10  
VCE = 6 V, IC = 10 mA  
VCE = 6 V, IC = 10 mA  
Gain Bandwidth Product  
Feed-Back Capacitance  
Insertion Power Gain  
Maximum Available Gain  
Noise Figure  
GHz  
pF  
Cre **  
0.3  
8.0  
10  
0.8  
VCB = 10 V, IE = 0, f = 1.0 MHz  
2
S21e  
6.0  
dB  
VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
VCE = 6 V, IC = 5 mA, f = 2.0 GHz  
MAG  
NF  
dB  
1.8  
3.0  
dB  
*
Pulse Measurement PW 350 s, Duty Cycle 2 %  
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.  
hFE Classification  
Class  
Marking  
hFE  
R43/Q *  
R43  
R44/R *  
R44  
R45/S *  
R45  
50 to 100  
80 to 160  
125 to 250  
* Old Specification / New Specification  
Document No. P10361EJ4V1DS00 (4th edition)  
Date Published March 1997 N  
Printed in Japan  
©
1984  
12345678

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与2SC3585-R43相关器件

型号 品牌 获取价格 描述 数据表
2SC3585-R43-A NEC

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 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585R44 NEC

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 		TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
2SC3585-R44 RENESAS

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 		UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3585-R44-A NEC

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 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585R45 NEC

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 		TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
2SC3585-R45-A NEC

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 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585-R-A NEC

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 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585S NEC

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 		TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
2SC3585-S NEC

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 		RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585-S RENESAS

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 		UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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